BUL216 - STMicroelectronics View larger

BUL216 - STMicroelectronics

STMicroelectronics

BUL216


Transistors Bipolar - BJT NPN Hi-Volt Fast Sw

$ 2.78

1750 1750 Items In Stock

Specification of BUL216

Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 800 V
Emitter- Base Voltage VEBO 9 V
Mounting Style Through Hole
Maximum DC Collector Current 4 A
Alternate Part No. 511-BUL216
DC Current Gain hFE Max 40
Package/Case TO-220-3
Continuous Collector Current 4 A
Minimum Operating Temperature - 65 C
Maximum Power Dissipation 90 W
Collector- Base Voltage VCBO 1600 V
Configuration Single
Maximum Operating Temperature + 150 C
Product Category Transistors Bipolar - BJT
DC Collector/Base Gain hFE Min 12
Collector-Emitter Saturation Voltage 1 V
Manufacturer Part No. BUL216
Series BUL216
Packaging Tube
Brand STMicroelectronics
Manufacturer STMicroelectronics